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The maximum operating voltage of an NMOS integrated circuit is 10  V and substrate doping level in the region between the MOSFETs (the field region) is NA=5 ×10^17  cm^-3. Determine the minimum oxide thickness in the field region (the field-oxide thickness) needed to prevent current leakage between neighboring MOSFETs. Neglect the oxide charge, and consider aluminum gate (the worst-case scenario). Hint: The field oxide can be considered as the gate oxide of a parasitic MOSFET that should be kept
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