Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
The five most commonly used materials, which are etched while deprocessing ICs are silicon dioxide, silicon nitride, polyimide, polysilicon and aluminum. This article provides a detailed recipes for ...
A method for inscribing a pattern on a wafer by shooting hot ions through a mask to evaporate the silicon dioxide insulation layer. Dry plasma etching replaces the wet processing method that uses film ...
A new approach combining atomic layer deposition and organic film etch process may solve critical challenges in the various processes in advanced nodes. We demonstrated a high selective and ...
In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
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