Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...

We clarify the nature of hafnia as a proper ferroelectric and show that there is a shallow double well involving a single soft polar mode as in well-known classic ferroelectrics. Using symmetry ...

A research team has discovered ferroelectric phenomena occurring at a subatomic scale in the natural mineral Brownmillerite. A research team led by Prof. Si-Young Choi from the Department of Materials ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22nm FD-SOI ...

This breakthrough, reported today at the IEDM 2024 conference, represents a major advance in ferroelectric memory technology, significantly advancing scalability for embedded applications and ...

The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a ...

Compute-in-memory (CiM) has become an attractive computing paradigm to address the memory and power walls in traditional designs for deep learning applications. With CiM, part of the computation ...

Abstract: In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically ...