Abstract: In medium-voltage, medium-frequency applications, high-power silicon carbide (SiC) MOSFET and insulated gate bipolar transistor (IGBT) modules commonly employ near-zero current switching ...
Abstract: Fatigue-induced delamination of the direct-bonded copper (DBC) solder layer is a critical and latent failure mode in multichip Insulated Gate Bipolar Transistor (IGBT) power modules. To ...
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