UK fast turnaround specialist to show expertise in GaAs and InP material systems III-V Epi, the fast turnaround UK manufacturer of low to medium volume III-V epitaxial structures, will be exhibiting ...
Abstract: This paper proposes a novel silicon carbide (SiC) trench MOSFET with periodically grounded P shield islands (SiC PSI-MOS) based on a secondary epitaxy process. The proposed SiC PSI-MOS ...
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