Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
EDN

Motor-drive modules combine the best of GTOs and IGBTs

Irvine, Calif. – The IGBT-7 Series of 1200-volt insulated gate bipolar transistor modules from Toshiba America Electronic Components tout higher operating frequency and reliability in general inverter ...
Telecompaper

NEW IGBT MODULES FROM TOSHIBA, FUJI ELECTRONIC

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Electronic Design

1.2-kV IGBT Modules Raise Performance Bar

The IGBT-7 series of 1.2-kV IGBT power modules relies on injection enhanced gate transistor (IEGT) process technology to yield lower saturation voltage, a wide safe operating area, higher operating ...
New Electronics

Toshiba introduces compact, but efficient, SiC MOSFET modules

Toshiba Electronics Europe has leveraged its expertise in wide bandgap (WBG) semiconductor processes to introduce a compact but efficient MOSFET module. The MG800FXF2YMS3 incorporates 3300V-rated dual ...