(a) The percolation model for gate leakage of metal nanocrystals floating gate memory. (b) Schematic structure diagram of the floating gate memory based on discrete Pt nanocrystals/h-BN/MoS 2 van der ...
The success of NAND flash memory in the semiconductor market is mainly driven by continuous and tremendous growth in the mobile phone and tablet PC markets, and the growth of adoption of high ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation today announced the development of the world’s first [1] three-dimensional (3D) semicircular split-gate flash memory cell structure “Twin BiCS FLASH” using ...
Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...
A review paper by scientists at Beijing Institute of Graphic Communication presented a thorough review of the existing ...
(Nanowerk Spotlight) Electronic memory devices are increasingly expected to provide not only greater storage density, but also faster access to information. As storage density increases, however, ...
Researchers at the École Polytechnique Fédérale de Lausanne (EPFL) in Switzerland have created flexible, energy-efficient, high-performance flash memory from graphene and molybdenite. Molybdenite has ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation today announced the development of the world’s first [1] three-dimensional (3D) semicircular split-gate flash memory cell structure “Twin BiCS FLASH” using ...
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