Microchip has introduced Schottky diode power modules in 700, 1200 and 1700V variants. They come in a choice of packaging and current ratings, as well as in various topologies including dual diode, ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...

Research reported in the Japanese Journal of Applied Physics by researchers at Mitsubishi Electric Corporation describes the development of a new power module made from a SiC metal-oxide-semiconductor ...

Cree, Inc., a market leader in silicon carbide (SiC) power devices, has introduced a series of packaged diodes that deliver the industry’s highest blocking voltage available in SiC Schottky technology ...

Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...

DUBLIN, Oct. 7, 2015 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/4rv28f/cree_1700v_sic) has announced the addition of the "CREE ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...