Researchers have realized a f<sub>T</sub>/f<sub>MAX</sub> 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume ...
Researchers at the University of Illinois at Urbana-Champaign have demonstrated the laser operation of a heterojunction bipolar light-emitting transistor. The scientists describe the fabrication and ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have emerged as a cornerstone in high-frequency electronics owing to their enhanced carrier mobility and reduced noise. The integration ...
Renesas Electronics has announced the availability of a new SiGe:C heterojunction bipolar transistor, the NESG7030M04, for use as a low noise amplifier transistor for wireless LAN systems, satellite ...
TOKYO — Hitachi Ltd.'s Central Research Laboratory has developed a prototype heterojunction bipolar transistor (HBT) that uses a novel epitaxial growth method — employing silicon, germanium and carbon ...
Researchers in the US claim to have fabricated a transistor that bridges the worlds of optics and electronics. “We have demonstrated light emission from the base layer of a heterojunction bipolar ...
Researchers have discovered that the transistor, long the star of electronics, has a yet-untapped talent–emitting light. With that newfound capability, the transistor could also become a stellar ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
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