Ars Technica

Transistor with a 1nm gate size is the world’s smallest

Conventional silicon-based electronics are rapidly approaching a fundamental barrier. Below about five nanometers, quantum effects make their behavior unpredictable. That’s led to research into ...
Nanowerk

Successful development of an upright-type double-gate MOS transistor capable of ultra-large scale in(...)

(Nanowerk News) The National Institute for Advanced Industrial Science and Technology (AIST) and Tohoku University have succeeded in manufacturing a high-performance upright-type double gate MOS ...
NextBigFuture

Major breakthrough in transistor size by creating gate only 1 nanometer long

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...
Semiconductor Engineering

Vertical MoS2 transistors with sub-1-nm gate lengths

Side-wall MoS 2 transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode Find the technical paper link here.
AZOM

1D Metallic Gate Electrodes for Ultra-Miniature Transistors

A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
EDN

An introduction to semiconductor technologies for power management – Part 2

N-MOS and P-MOS transistors are analogous respectively to NPN and PNP transistors but their conduction mechanism is based completely on one type of carrier: holes for the PMOS and electrons for the ...
Semiconductor Engineering

From FinFETs To Gate-All-Around

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...