In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
The new W-gated Trench MOSFET offers better trade-off between on-resistance and gate-drain capacitance. Mohamed Darwish, Vishay Siliconix, Santa Clara, Calif. Power demands of computing and telecom ...
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