A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

Imec recently unveiled strained Germanium devices based on a silicon-replacement process, a first according to the research center. The process involves growing a Ge/SiGe quantum-well heterostructure ...

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

TOKYO & NEW YORK & SUNNYVALE, Calif. – 16 Dec 2008: Toshiba Corporation (TOKYO:6502), IBM (NYSE: IBM), and AMD (NYSE:AMD) today announced that they have together developed a Static Random Access ...

Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...

Microchip fab plants in the United States can cram billions of data processing transistors onto a tiny silicon chip, but a critical device, in essence a “clock,” to time the operation of those ...

Samsung has been hit with a $400M fine for failing to license a critical FinFET patent -- and that damage could balloon up to $1.2B at the judge's discretion. Share on Facebook (opens in a new window) ...

A new technique uses standard chip fab methods to fabricate the building block of a timing device, critical to all microprocessors. Currently, this timing device, known as an acoustic resonator, must ...