Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...
- Expanding line-up of the highly efficient transistor arrays with the industry’s first DMOS FET source-output driver - TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Semiconductor & ...
Targeting use in portable-system applications that require raising a battery's voltage to a higher level, IC boost regulators often include output transistors that can drive storage inductors. However ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Semiconductor & Storage Products Company today announced the addition of new packages to its line-up of new-generation highly efficient ...
Microchip Technology has announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET for commercial aerospace and defense space applications. Intended for space ...
Traditional solutions often rely on two large MOSFETs to meet stringent specs -- 20A current rating, 28-30V breakdown voltage, and less than or equal to 5 milliohms ON-resistance -- resulting in ...
The EL7551CU step-down dc-dc regulator targets distributed power applications, including telecommunications, data communications, networking, modems, and graphics accelerators. It features synchronous ...
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