Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Electronic Design

New Power Module Integrates SiC MOSFETs and IGBTs to Cut EV Costs

Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
Electronic Design

2,300-V SiC Power Module Raises the Bar for Renewable Energy

Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
EDN

2-in-1 SiC module raises power density

Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...
EDN

High-voltage SiC MOSFETs power critical energy systems

Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known-good-die (KGD) formats. Leveraging fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology, these ...
Business Wire

Mitsubishi Electric to Ship Samples of SBD-embedded SiC-MOSFET Module

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...