Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new ...

Beverly, Mass – Clare (an IXYS company) has seven new n-channel depletion-mode MOSFET offerings that address the rising demand for devices that feature normally-closed switch operation, low resistance ...

Traditionally, the depletion MOSFET was classified as a linear device because the conduction channel between source and drain could not be pinched off and was thus unqualified for digital switching.

Consider the newest precharged floating-gate MOSFETs from Advanced Linear Devices as very fast alternatives for normally closed relays that consume virtually zero power, and you won't go far wrong.

UnitedSiC has expanded its UF3C FAST series of silicon carbide mosfets to include parts with Kelvin contacts. Available in 650V and 1.2kV versions, they come in a TO-247-4L package. “The Kelvin ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...

WASHINGTON, D.C., Oct. 26, 2017 -- Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. Enter wide ...

Enter wide bandgap (WBG) semiconductors. Seen as significantly more energy-efficient, they have emerged as leading contenders in developing field-effect transistors (FETs) for next-generation power ...