CMOS devices have large input impedance with input currents on the order of 0.01nA. Adding feedback circuitry can result in a latch-like device that can be used to store bits, and also operate in a ...
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...
New technical paper titled “Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits” from researchers at Federal University of Santa Catarina, Brazil. “This work proposes a truly ...
Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...
Any typical digital design style with CMOS uses complementary pairs of p-type and n-type MOSFETs for logic functions implementation. Naturally, CMOS always ought to provide INVERTED outputs like ...
A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...
JFETs are, almost invariably, depletion mode devices, which means that there will be some drain current at a zero-applied gate-source potential. This current will decrease in a fairly linear manner as ...
Silicon Carbide (SiC) power semiconductors are rapidly emerging in the commercial market. These devices offer several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can ...
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