Electronic Design

Crolles2 Alliance reveals ultra-dense SRAM cell in 45 nm conventional bulk CMOS

The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...
Electronic Design

High-Density, Low-Power 32M CMOS SRAM

A line of legacy low-power CMOS SRAMs from Alliance Memory has been expanded with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a ...
Semiconductor Engineering

SRAM-Based IMC For Cryogenic CMOS Using Commercial 5 nm FinFETs

A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology ...
Semiconductor Engineering

Mixed SRAM And eDRAM Cell For Area And Energy-Efficient On-Chip AI Memory (Yale Univ.)

“AI chips commonly employ SRAM memory as buffers for their reliability and speed, which contribute to high performance. However, SRAM is expensive and demands significant area and energy consumption.