LEUVEN, Belgium — Independent microelectronics R&D center IMEC has teamed with National Semiconductor to develop a 0.18-micron and follow-up generations of silicon germanium (SiGe)-based BiCMOS ...
IMEC, the Belgian chip R&D house, and National Semiconductor, are working together to develop a 0.18µm silicon germanium (SiGe)-based BiCMOS process technology. Targeted at low power applications, the ...
Leuven, Belgium – National Semiconductor Corp. has teamed with IMEC, the independent microelectronics R&D center here, to develop 0.18-micron and 0.13-micron silicon germanium-based BiCMOS process ...
In an effort to gain a competitive edge in the cost-sensitive wireless communications arena, STMicroelectronics has added silicon-germanium (SiGe) biCMOS to its arsenal of process technologies. The ...
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