TOKYO--(BUSINESS WIRE)--OKI (TOKYO: 6703), in collaboration with Nisshinbo Micro Devices Inc. (Head office: Tokyo; President: Keiichi Yoshioka), has successfully achieved three-dimensional (3D) ...

Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...

Forbes contributors publish independent expert analyses and insights. Samsung had an industry Foundry event focused on solutions for “Empowering the AI Revolution,” where they announced new process ...

SEOUL, Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced the immediate availability of its silicon-proven 3D IC packaging ...

Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...

Penn State researchers demonstrated 3D integration of semiconductors at a massive scale, characterizing tens of thousands of devices using 2D transistors made with 2D semiconductors, enabling ...

CEA-Leti, the coordinator of the FAMES Pilot line, has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices match ...

A new chip-based quantum memory uses nanoprinted “light cages” to trap light inside atomic vapor, enabling fast, reliable ...

Artificial intelligence has raced ahead so quickly that its biggest constraint is no longer clever algorithms but the ...

In the past few years, there have been a number of announcements involving advanced packaging architectures for semiconductor devices. These architectures offer product designers tremendous ...